Semiconductor non-volatile memory device

ABSTRACT

A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a memory gate is formed on the p-type well via a laminated film composed of a silicon oxide film, a silicon nitride film, and a silicon oxide film. The memory gate is adjacent to the selection gate via the laminated film. In the regions on both sides of the selection gate and the memory gate in the p-type well, n-type impurity diffusion layers serving as the source and drain are formed. The region controlled by the selection gate and the region controlled by the memory gate located in the channel region between said impurity diffusion layers have the different charge densities of the impurity from each other.

This is a Continuation Application of U.S. application Ser. No.13/328,104, filed Dec. 16, 2011, which, in turn, is a ContinuationApplication of U.S. application Ser. No. 12/648,796, filed Dec. 29,2009, and now U.S. Pat. No. 8,084,810, which, in turn, is a ContinuationApplication of U.S. application Ser. No. 11/589,095, filed Oct. 30,2006, and now U.S. Pat. No. 7,671,404, which, in turn, is a ContinuationApplication of U.S. application Ser. No. 10/726,507, filed Dec. 4, 2003,and now U.S. Pat. No. 7,132,718; and the entire disclosures of which arehereby incorporated by reference.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to a non-volatile semiconductor memorydevice and the fabrication method thereof. More particularly, thepresent invention relates to a method for realizing a non-volatilesemiconductor memory device with good write/erase characteristics.

BACKGROUND OF THE INVENTION

As an example of an integrated semiconductor memory incorporated in anLSI, there is a non-volatile memory. The non-volatile memory is a devicecharacterized in that the stored data is not lost even when the power ofthe LSI is turned off, and it has become an extremely important devicefor using the LSI in various applications.

As an example of the non-volatile memory of the semiconductor device,there are a so-called floating gate memory and a memory using aninsulator (see the following Non-Patent Document 1). It is known thatthe insulator-type memory, in which insulators are laminated andelectric charge is stored in the traps at the interface of theinsulators and those in the insulators, is not required to form newconductive layers in comparison to the floating gate memory and thus thememory has a good matching with the process for the CMOS LSI.

However, in the conventional memory in which electric charge is storedin the insulators (insulator-type memory), it is required to maintainthe sufficient charge holding characteristics while repeating the chargeinjection and emission. Therefore, it is difficult to realize such amemory. For its solution, the technique for rewriting the stored data byinjecting the charge with a different polarity instead of emitting thecharge has been proposed (see the following Patent Document 1).

In this structure, the polycrystalline silicon gate (memory gate) forperforming the memory operation and the gate for selecting the cell(selection gate) are separately formed. In this memory cell structure,two transistors composed of the memory gate and fundamentally based onthe n-channel MOS are arranged on both sides of the selection gate. Thegate insulator of the memory gate has a so-called MONOS(Metal-Oxide-Nitride-Oxide-Semiconductor (Silicon)) structure in which asilicon nitride film is sandwiched between two silicon oxide films. Thegate insulator of the selection gate is composed of a silicon oxidefilm. The impurity diffusion layers (source, drain) are formed withusing the selection gate and the memory gate as the masks.

-   Non-patent Document 1: pp. 496-506 in “Physics of Semiconductor    Devices” second edition by S. Sze, published by Wiley-Interscience    publication (USA) in 1981.-   Patent Document 1: U.S. Pat. No. 5,969,383.

SUMMARY OF THE INVENTION

As the basic functions of the memory cell as mentioned above in whichthe polycrystalline silicon gate (memory gate) for performing the memoryoperation and the gate for selecting the cell (selection gate) areseparately and adjacently arranged, there are four functions such aswriting, erasing, holding, and reading. Note that the terms forindicating each of the four functions are used as typical examples, andit is also possible to use the terms of writing and erasing to indicatethe opposite one. In addition, the operation thereof is also describedusing a typical case as an example. However, various operations are alsoavailable. In the embodiments, the memory cell formed of an n-channelMOS will be described. However, the memory cell can be similarly formedof a p-channel MOS in principle.

In the case of writing operation, positive potential is applied to theimpurity diffusion layer on the side close to the memory gate and theground potential similar to that of the semiconductor substrate isapplied to the impurity diffusion layer on the side close to theselection gate. By applying to the memory gate the gate overdrivevoltage higher than that of the impurity diffusion layer on the sideclose to the memory gate, the channel below the memory gate is turnedon. In this case, by setting the potential of the selection gate to thevalue 0.1 or 0.2 V higher than the threshold value, the channel belowthe selection gate is turned on. At this time, since the strongestelectric field is generated around the boundary between the two gates, alarge number of hot electrons are generated and injected into the sidenear the memory gate. This phenomenon is known as the Source SideInjection (SSI). The feature of the hot electron injection in thismanner is that electric field is concentrated around the boundarybetween the selection gate and the memory gate, and thus, the injectionis sometimes concentrated on the edge portion of the memory gate at theside of the selection gate. Also, since the charge is stored in theinsulator (gate insulator) below the memory gate, the electrons aretrapped in an extremely small area.

In the case of erasing operation, negative potential is applied to thememory gate and the positive potential is applied to the impuritydiffusion layer on the side close to the memory gate. By doing so, thestrong inversion occurs in the region where the memory gate on the edgeportion of the impurity diffusion layer on the side close to the memorygate and the impurity diffusion layer are overlapped. In this manner,the tunneling phenomenon between bands occurs and thus the holes can begenerated. The generated holes are moved by the bias of the memory gateand are injected into the insulator (gate insulator) below the memorygate, thereby performing the erasing operation. More specifically, thethreshold value of the memory gate increased by the charge of theelectrons can be decreased by the charge of the injected holes. Thefeature of this erasing method is that, since the holes are generated inthe edge portion of the impurity diffusion layer on the side close tothe memory gate, the injected holes are concentrated on the edge portionof (the gate insulator below) the memory gate on the side close to theimpurity diffusion layer.

In the case of holding operation, the charge is held as the charge ofcarriers injected into the insulator (gate insulator below the memorygate). Since the movement of the carriers in the insulator is extremelylimited and slow, it is possible to hold the charge even if no voltageis applied to the electrode.

In the case of reading operation, the positive potential is applied tothe impurity diffusion layer on the side close to the selection gate andthe positive potential is applied to the selection gate. By doing so,the channel below the selection gate is turned on. At this time, anappropriate memory gate potential capable of distinguishing thedifference in threshold values of the memory gate applied in the writingoperation and erasing operation (that is, the intermediate potentialbetween the threshold value in the writing operation and the thresholdvalue in the erasing operation) is applied. In this manner, the heldcharge data can be read as a current.

As described above, the electrons and the holes generated in the writingoperation and the erasing operation are respectively injected todifferent edge portions of (the gate insulator below) the memory gate.In the case of data reading, the charge data is determined based on thethreshold value of the memory gate. Therefore, the difference in thepositions of the charge injection may cause the reduction in efficiencyof the writing and erasing operations, which will cause the reduction inperformance of the non-volatile semiconductor memory device. Also, forthe achievement of the good charge holding characteristics, it isdesirable to form (a gate insulator made of) a laminated structure inwhich a layer containing a large number of charge traps (siliconnitride) is sandwiched between insulators such as silicon oxide withpotential barrier height larger than that of silicon usually used toform a channel and a gate. In this case, however, it is necessary tocross over the barrier in order to effectively inject the charge.

In addition, since the selection transistor gains large readout current,it is desirable to reduce the thickness of the gate insulator thereof.Meanwhile, since the memory transistor holds the charge in the gateinsulator, the gate insulator has a laminated structure with a largethickness. Due to the large thickness of the gate insulator, thethreshold value of the memory transistor becomes extremely high.

An object of the present invention is to provide a non-volatilesemiconductor memory device with good write/erase characteristics and afabrication method thereof.

The above and other objects and novel characteristics of the presentinvention will be apparent from the description and the accompanyingdrawings of this specification.

The typical ones of the inventions disclosed in this application will bebriefly described as follows.

In the non-volatile semiconductor memory device according to the presentinvention, the charge density of an impurity in the channel regioncontrolled by the selection gate which constitutes the memory cell andthe charge density of an impurity in the channel region controlled bythe memory gate are respectively adjusted.

In the fabrication method of a non-volatile semiconductor memory deviceaccording to the present invention, when forming the memory cellstructure, ion implantation is performed with using a selection gate asa mask, and then, a memory gate is formed.

BRIEF DESCRIPTIONS OF THE DRAWINGS

FIG. 1 is a sectional view showing the principal part of thenon-volatile semiconductor memory device in the fabrication processaccording to an embodiment of the present invention;

FIG. 2 is a sectional view showing the principal part at the stepsubsequent to FIG. 1 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 3 is a sectional view showing the principal part at the stepsubsequent to FIG. 2 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 4 is a sectional view showing the principal part at the stepsubsequent to FIG. 3 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 5 is a sectional view showing the principal part at the stepsubsequent to FIG. 4 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 6 is a sectional view showing the principal part at the stepsubsequent to FIG. 5 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 7 is a sectional view showing the principal part at the stepsubsequent to FIG. 6 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 8 is a partially enlarged sectional view of FIG. 7;

FIG. 9 is a sectional view showing the principal part at the stepsubsequent to FIG. 7 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 10 is a sectional view showing the principal part at the stepsubsequent to FIG. 9 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 11 is a sectional view showing the principal part at the stepsubsequent to FIG. 10 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 12 is a sectional view showing the principal part at the stepsubsequent to FIG. 11 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 13 is a sectional view showing the principal part at the stepsubsequent to FIG. 12 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 14 is a plan view showing the principal part of the non-volatilesemiconductor memory device according to an embodiment of the presentinvention;

FIG. 15 is a plan view showing the principal part of the non-volatilesemiconductor memory device according to another embodiment;

FIG. 16 is a sectional view showing the principal part of the memorycell structure of the non-volatile semiconductor memory device accordingto an embodiment of the present invention;

FIG. 17 is a partially enlarged sectional view around the edge portionof the memory gate of the memory cell structure in FIG. 16;

FIG. 18 is a graph showing the readout current when the holes areinjected into the memory cell so that the electric current can flow;

FIG. 19 is a graph showing the readout current when the holes areinjected into the memory cell so that the electric current can flow;

FIG. 20 is a graph showing the readout current when the holes areinjected into the memory cell so that the electric current can flow;

FIG. 21 is a sectional view schematically showing the state of thecarriers injected into the memory cell in FIG. 16;

FIG. 22 is a sectional view schematically showing the state after theerasing operation around the edge portion of the memory gate 17;

FIG. 23 is an explanatory diagram showing the potential distributionalong the line C-C in FIG. 22;

FIG. 24 is a graph showing the voltage pulse applied at the time of theerasing operation;

FIG. 25 is a graph showing the voltage pulse applied at the time of theerasing operation;

FIG. 26 is a graph showing the voltage pulse applied at the time of theerasing operation;

FIG. 27 is a graph showing the voltage pulse applied at the time of theerasing operation;

FIG. 28 is a sectional view showing the principal part of thenon-volatile semiconductor memory device in the fabrication processaccording to another embodiment of the present invention;

FIG. 29 is a sectional view showing the principal part at the stepsubsequent to FIG. 28 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 30 is a sectional view showing the principal part at the stepsubsequent to FIG. 29 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 31 is a sectional view showing the principal part at the stepsubsequent to FIG. 30 in the fabrication process of the non-volatilesemiconductor memory device;

FIG. 32 is a partially enlarged sectional view of FIG. 29;

FIG. 33 is a sectional view showing the principal part of thenon-volatile semiconductor memory device in the fabrication processaccording to another embodiment of the present invention; and

FIG. 34 is a sectional view showing the principal part of thenon-volatile semiconductor memory device in the fabrication processaccording to another embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the embodiments described below, the invention will be described in aplurality of sections or embodiments when required as a matter ofconvenience. However, these sections or embodiments are not irrelevantto each other unless otherwise stated, and the one relates to the entireor a part of the other as a modification example, details, or asupplementary explanation.

Also, in the embodiments described below, when referring to the numberof an element (including number of pieces, values, amount, range, andthe like), the number of the element is not limited to a specific numberunless otherwise stated or except the case where the number isapparently limited to a specific number in principle. The number largeror smaller than the specified number is also applicable.

Further, in the embodiments described below, it goes without saying thatthe components (including element steps) are not always indispensableunless otherwise stated or except the case where the components areapparently indispensable in principle.

Similarly, in the embodiments described below, when the shape of thecomponents, positional relation thereof, and the like are mentioned, thesubstantially approximate and similar shapes and the like are includedtherein unless otherwise stated or except the case where it can beconceived that they are apparently excluded in principle. This conditionis also applicable to the numerical value and the range described above.

In addition, components having the same function are denoted by the samereference symbols throughout the drawings for describing the embodiment,and the repetitive description thereof is omitted.

Also, in the drawings used in the embodiments, hatching is used in somecases even in a plan view so as to make the drawings easy to see.

Hereinafter, the embodiments of the present invention will be describedin detail with reference to the accompanying drawings.

First Embodiment

A non-volatile semiconductor memory device (semiconductor device) and afabrication method thereof according to the first embodiment will bedescribed with reference to the drawings. FIGS. 1 to 13 are sectionalviews showing the principal parts in the fabrication process of thenon-volatile semiconductor memory device according to an embodiment ofthe present invention, in which FIG. 8 is an enlarged sectional view ofFIG. 7.

FIGS. 1 to 13 illustrate the process for forming the semiconductordevice in a memory cell region A1 and a memory peripheral circuitregion. In addition, since the high voltage is required in the writingoperation, a high breakdown voltage device region A2 and a normal deviceregion A3 are formed in the memory peripheral circuit region. It is notalways necessary to locate the memory cell region A1 adjacent to thememory peripheral circuit region (high breakdown voltage device regionA2 and the normal device region A3). In FIGS. 1 to 13, however, the casewhere the memory peripheral circuit region is located adjacent to thememory cell region A1 is illustrated for easier understanding. Inaddition, the case where an re-channel MISFET (Metal InsulatorSemiconductor Field Effect Transistor) is formed in the memory cellregion A1 will be described in this embodiment. However, a p-channelMISFET with the opposite polarity can be formed in the memory cellregion A1. Similarly, the case where an n-channel MISFET is formed inthe memory peripheral circuit region will be described in thisembodiment. However, a p-channel MISFET with the opposite polarity canbe formed in the memory peripheral circuit region. Furthermore, it isalso possible to form a CMOSFET (Complementary MOSFET) or a CMISFET(Complementary MISFET) in the memory peripheral circuit region. Inaddition, the process (fabrication process) in which a gate insulator isformed before forming a device isolation region is used in thisembodiment to provide improved device characteristics. However, sincethe structure (for applying high electric field) in the presentinvention is essentially independent of the method for forming thedevice isolation region, the process for forming the gate insulator canbe performed after the widely used device isolation process, forexample, STI (Shallow Trench Isolation) and LOCOS (Local Oxidization ofSilicon).

First, as shown in FIG. 1, a semiconductor substrate (wafer) 1 made ofp-type single crystal silicon with a specific resistance of about 1 to10 Ωcm is prepared. Next, after the thermal oxidation of the surface ofthe semiconductor substrate 1 (after forming a thermal oxide film),p-type wells 2, 3, and 4 are formed on the surface of the semiconductorsubstrate 1 by the ion implantation method (impurity such as boron areion-implanted). The p-type wells 2, 3, and 4 are formed so as to extendfrom the main surface of the semiconductor substrate 1 to apredetermined depth.

Then, after the thermal oxide film is removed, the oxidation for forminga sacrificial oxide film is performed, and then, the sacrificial oxidefilm is removed. Thereafter, the gate oxidation is performed. At thistime, since a gate insulator with the largest thickness is required inthe high breakdown voltage device region (high breakdown voltage region)A2, the oxidation in accordance with the thickness (thickness of thegate insulator required in the high breakdown voltage device region A2)is performed to form a gate insulator 5 in the high breakdown voltagedevice region A2. The oxide film in the other regions (regions otherthan the high breakdown voltage device region A2) is removed by usingthe photolithography method and the like. Subsequently, the oxidation inaccordance with (the thickness of gate insulators required in) the otherregions A1 and A3 is performed to form a gate insulator 6 with athickness of about 3 nm in each of the memory cell region A1 and in thedevice region A3. At the time of the second oxidation (when forming thegate insulator 6), the thickness of the gate insulator 5 already formedin the high breakdown voltage region A2 is increased (e.g., by 3 nm).Therefore, it is preferable to perform the first oxidation inexpectation of the change in thickness (of the gate insulator 5). In thecase where more seed layers are required, they can be formed byrepeating the process described above. Also, it is known that thebreakdown voltage of the oxide film in contact with the photoresist isdecreased. Therefore, it is preferable to deposit a thin oxide film(silicon oxide film) with a thickness of about 5 nm on the semiconductorsubstrate 1 by the CVD (Chemical Vapor Deposition) method before coatingthe photoresist. Since the CVD film (silicon oxide film formed by theCVD method) has the higher etching rate (etched more easily) than thatof the thermal oxide film (silicon oxide film formed by the thermaloxidation), it is possible to easily remove the CVD film simultaneouslywith the removal of unnecessary portion of the gate insulator (oxidefilm).

Next, after forming the gate insulators 5 and 6, a polycrystallinesilicon film 7 and a silicon nitride film 8 are sequentially formedabove the semiconductor substrate 1 by the CVD method as shown in FIG.2. The thickness of the polycrystalline silicon film 7 is, for example,about 30 nm, and the thickness of the silicon nitride film 8 is, forexample, about 50 nm.

Next, as shown in FIG. 3, the silicon nitride film 8, thepolycrystalline silicon film 7, the gate insulators 5 and 6, and thesemiconductor substrate 1 (p-type wells 2, 3, and 4) are selectivelyetched to the depth of, for example, 300 nm by the photolithographymethod, thereby forming trenches 9 in the regions in which the deviceisolation regions are to be formed.

Next, as shown in FIG. 4, about 10 nm of the surface of thesemiconductor substrate 1 (p-type wells 2, 3, and 4) exposed through thetrench 9 is thermally oxidized, and then, a silicon oxide film with athickness of, for example, about 500 nm is deposited above thesemiconductor substrate 1 by the CVD method so as to fill the trench 9:Thereafter, the silicon oxide film is polished by the CMP (ChemicalMechanical Polishing) method. In this manner, the planarization processis performed until the surface of the silicon nitride film 8 is exposedand the silicon oxide is filled in the trenches 9 to form deviceisolation regions 10. Then, the silicon nitride film 8 is removed by,for example, the wet etching or the like. If necessary, a p-typeimpurity 11 (impurity functioning as acceptor) such as boron (B) can beion-implanted (ion implantation) into the channel surface for settingthe threshold value at this time. The case where the impurity 11 ision-implanted into the region near the surface of the p-type well 3 inthe high breakdown voltage region A2 is schematically shown in FIG. 4.However, the impurity 11 can also be ion-implanted into the region nearthe surface of the p-type well 2 in the memory cell region A1. By doingso, it becomes possible to adjust the impurity concentration (chargedensity of an impurity) in the channel region below the selection gateof the memory cell formed in the memory cell region A1. For example, thethreshold value of the selection gate can be set to be the current valueof 10⁻⁹ A/μm in the off state with Vcg=0 V. Note that the illustrationof the ion-implanted impurity 11 is omitted in FIG. 5 and the subsequentdrawings.

Next, as shown in FIG. 5, a polycrystalline silicon film 12 with athickness of, for example, about 150 nm is deposited above thesemiconductor substrate 1 by using the CVD method, and then, an impuritysuch as phosphorus (P) is doped to a high concentration into (thepolycrystalline silicon film 12 in) the region where the n-channelMISFET is to be formed. Subsequently, a silicon oxide film 13 with athickness of, for example, about 50 nm is laminated (formed) on thepolycrystalline silicon film 12 by using the CVD method.

Next, as shown in FIG. 6, (the laminated film of) the silicon oxide film13, the polycrystalline silicon film 12, and the polycrystalline siliconfilm 7 are selectively etched by using the photolithography method topattern the region in which the memory gate of the memory cell is to beformed. By doing so, the regions in which the later-described memorygate and the impurity diffusion layer are to be formed are exposed.Then, as schematically shown in FIG. 6, an impurity 14 is ion-implanted(ion implantation) with using, as a mask, (the laminated film of) thepatterned polycrystalline silicon film 7, the polycrystalline siliconfilm 12, and the silicon oxide film to be a selection gate. It ispossible to select the impurity 14 from a p-type impurity (e.g., boron)and an n-type impurity (e.g., arsenic or phosphorus) according to need.In this manner, the impurity 14 is introduced to the region where thememory gate is to be formed and to the adjacent region thereof in whichthe impurity diffusion layer is to be formed, and the impurityconcentration (charge density of an impurity) in the region (channelregion) below the memory gate formed later can be adjusted. Therefore,it becomes possible to increase the electric field generated by the PNjunction with the impurity diffusion layer formed later, and alsopossible to set (adjust) the threshold value. In FIG. 6, the case wherethe impurity 14 is ion-implanted is schematically shown. However, theillustration of the ion-implanted impurity 14 is omitted in FIG. 7 andthe subsequent drawings.

Next, as shown in FIG. 7 and FIG. 8 which is a partially enlargedsectional view of FIG. 7, which shows the part around the region wherethe memory gate is to be formed, after the oxidation for forming asacrificial layer, a silicon oxide film 15 a with a thickness of, forexample, about 6 to 7 nm is formed above the semiconductor substrate 1by the thermal oxidation; and then, a silicon nitride film 15 b with athickness of, for example, about 8 to 9 nm is deposited (formed) on thesilicon oxide film 15 a. Thereafter, a silicon oxide film 15 c with athickness of, for example, about 7 to 8 nm is deposited (formed) on thesilicon nitride film 15 b. In this manner, the laminated film 15 isformed. In FIG. 7, the laminated film of the silicon oxide film 15 a,the silicon nitride film 15 b, and the silicon oxide film 15 c is shownas the laminated film 15 for the sake of easy understanding.Consequently, the thickness of the laminated film 15 is, for example,about 21 to 24 nm. It is also possible to obtain a high breakdownvoltage film when the last oxide film (the uppermost silicon oxide film15 c in the laminated film 15) is formed by oxidizing the upper portionof the nitride film (the intermediate silicon nitride film 15 b in thelaminated film 15).

The laminated film 15 functions as a gate insulator of the memory gateformed later and has a charge holding function. Therefore, the laminatedfilm 15 has a laminated structure of at least three layers, in which thepotential barrier height of the inner layer is smaller in comparison tothe potential barrier height of the outer layer. This can be achieved byforming the laminated film 15 so as to have a laminated structure of thesilicon oxide film 15 a, the silicon nitride film 15 b, and the siliconoxide film 15 c as described in this embodiment.

It is possible to form the silicon oxide film 15 c by simply oxidizingthe upper portion of the silicon nitride film 15 b. However, since thegrowth of the oxide film (growth rate of the silicon oxide film byoxidizing the silicon nitride film 15 b) is relatively slow, it ispossible to form the silicon oxide film 15 c in the following manner.That is, after depositing a silicon oxide film with a thickness of, forexample, about 6 nm on the silicon nitride film 15 b, only 1 nm of theupper portion of the silicon nitride film 15 b is oxidized, and thus,the silicon oxide film 15 c with the total thickness of about 7 nm isformed. By doing so, the film with good film quality can be obtained.

The thickness of each film constituting the laminated-film 15 (thicknessof the silicon oxide film 15 a, the silicon nitride film 15 b, and thesilicon oxide film 15 c) varies depending on the use of thesemiconductor device (non-volatile semiconductor memory device) to beformed. Therefore, the typical examples of the thickness (value) of thefilms are shown in this embodiment, and the thickness is not limited tothem. For example, the charge holding time can be increased byincreasing the thickness of the oxide films (the silicon oxide films 15a and 15 c) formed on and below the silicon nitride film 15 b. In thiscase, the device will have the characteristics of the reduced readoutcurrent.

Next, as shown in FIG. 9, a polycrystalline silicon film 16 doped withphosphorus is deposited above the entire surface of the semiconductorsubstrate 1 by the CVD method. The thickness of the depositedpolycrystalline silicon film 16 is, for example, about 100 nm. Then, asshown in FIG. 10, the polycrystalline silicon film 16 is etched (dryetching, anisotropic etching, and etching back) to the depositedthickness (about 100 nm). By doing so, polycrystalline silicon spacers(memory gate, gate electrode) 17 a to be memory gates (gate electrode)are formed on the side surfaces of (the laminated structure of thepolycrystalline silicon film 7, the polycrystalline silicon film 12, andthe silicon oxide film 13 to be) the selection gate. More specifically,the polycrystalline silicon spacers 17 a can be formed in the samemanner as that for forming the insulating sidewalls (sidewall spacers)on the sidewalls of the gate electrode. Consequently, thepolycrystalline silicon films 16 are left via the laminated film 15 onthe sidewalls of the laminated structure of the polycrystalline siliconfilm 7, the polycrystalline silicon film 12, and the silicon oxide film13, and the polycrystalline silicon film 16 in the other region isremoved, and thus, the polycrystalline silicon spacers 17 a made of theleft polycrystalline silicon film 16 are formed. In addition, though notshown, the patterning of the extension portions by the photolithographymethod is performed simultaneously with the process for thepolycrystalline silicon spacers 17 a. More specifically, thepolycrystalline silicon film 16 is not etched and left in the regionwhere the contact holes connected to the memory gate in the latter stepare to be formed.

Also, the memory gate length is determined depending on the depositionthickness of the polycrystalline silicon film 16. In other words, thememory gate length can be adjusted by adjusting the thickness of thepolycrystalline silicon film 16 deposited above the semiconductorsubstrate 1. For example, it is possible to reduce the gate length byreducing the deposition thickness of the polycrystalline silicon film16, and also possible to increase the gate length by increasing thedeposition thickness of the polycrystalline silicon film 16. Since thetradeoff occurs between the channel controllability and the write/erasecharacteristics, the deposition thickness of the polycrystalline siliconfilm 16 is preferably set to 30 to 150 nm. However, in the case wherethe gate length of the selection gate is about 200 nm, it is desirablethat the deposition thickness of the polycrystalline silicon film 16 isset to 50 to 100 nm. By doing so, it becomes possible to set the gatelength of the memory gate to about 50 to 100 nm. In addition, theunnecessary portion of the polycrystalline silicon film 16 can beremoved after this process.

Next, after a p-type impurity is doped into the gate (polycrystallinesilicon film 16) in the region where the p-channel MISFET (not shown) isto be formed, the process for the selection gate and the gate of theperipheral transistor is performed as shown in FIG. 11. Morespecifically, the polycrystalline silicon film 7, the polycrystallinesilicon film 12, the silicon oxide film 13 and the laminated film 15 areselectively removed by using the photolithography method and the dryetching method. By doing so, selection gates (first gate, gateelectrode) 18 and the gate electrodes 19 of the peripheral transistors(transistors such as MISFETs formed in the high breakdown voltage deviceregion A2 and device region A3). At this time, unnecessary ones of thepolycrystalline silicon spacers 17 a are also removed, and the remainingpolycrystalline silicon spacers 17 a become memory gates (second gate,gate electrode) 17. The selection gate 18 extends in the directionvertical to the paper of FIG. 11. The memory gate 17 is formed on one ofthe sidewalls (side surface) of the selection gate 18 via the laminatedfilm 15 and extends in the direction vertical to the paper of FIG. 11.

Subsequently, an (n-type) impurity such as arsenic (As) is doped byusing the ion implantation method (with using the memory gate 17, theselection gate 18 and the gate electrode 19 as a mask). By doing so,n-type impurity diffusion layers (semiconductor region, impuritydiffusion layer electrode) 20, 21, and 22 to be the source and drain(source/drain electrodes) are formed. The impurity diffusion layer(semiconductor region) 20 and the impurity diffusion layer(semiconductor region) 21 function as the source and drain of the memorycell formed in the memory cell region A1, and the impurity diffusionlayers 22 function as the source and drain of the MISFET formed in theperipheral circuit region. In the structure of this embodiment, in thecase of the erasing operation, holes are produced by making use of theso-called tunneling phenomenon between bands at the edge portion of theimpurity diffusion layer 20. It is known that the efficiency of thishole production by the phenomenon depends on the impurity concentration(charge density of an impurity) in the impurity diffusion layer 20 andthere is the optimum concentration. Thus, by performing the ionimplantation of phosphorus (dose amount: 10¹³ to 10¹⁴ cm⁻²) togetherwith arsenic at the time when forming the impurity diffusion layer 20,the optimum concentration region (the region having the charge densityof an impurity suitable for the hole production) can be formed on theside (edge portion) of the impurity diffusion layer formed by arsenic.More specifically, when comparing phosphorus and arsenic, phosphorus isdiffused in the lateral direction (the direction parallel to the mainsurface of the semiconductor substrate 1) more easily than arsenic.Therefore, the region of the relatively low impurity concentration isformed at the outer edge portion of the impurity diffusion layer 20rather than the central portion. In this manner, the extremely effectivehole production can be achieved.

In addition, it is also possible to form a so-called Halo structure inwhich boron (boron diffusion layer) encircles the arsenic diffusionlayer by the ion implantation of boron simultaneously with the formationof the impurity diffusion layer 20 by the use of (by the ionimplantation of) arsenic. In this manner, it becomes possible to furtherincrease the electric field.

Next, as shown in FIG. 12, a silicon oxide film with a thickness ofabout 80 nm is formed above the semiconductor substrate 1, and thesilicon oxide film is selectively etched (dry etching) and patterned byusing the photolithography method. By doing so, spacers (insulatingspacer, silicon oxide spacer) 23 made of silicon oxide are formed on theside surfaces of the gates (memory gate 17). The spacer 23 is formed soas to cover the memory gate portion. More specifically, the spacer 23 isformed so as to cover the memory gate 17 (polycrystalline silicon spacer17 a) and the impurity diffusion layer 20 and functions to isolate thememory gate 17 from the impurity diffusion layer 20. At this time, thesilicon oxide film 13 and the laminated film 15 on the selection gate 18and the gate electrode 19 are also removed by the etching (dry etching),and the (uppermost) polycrystalline silicon films 12 of the selectiongate 18 and the gate electrode 19 are exposed. In addition, the oxidefilm is left on the sidewalls of the selection gate 18 and the gateelectrode 19 to form sidewalls (sidewall spacers) 24.

In addition, by doping an (n-type) impurity such as arsenic into theregions on both sides of the gate electrode 19 and the sidewalls 24thereof, impurity diffusion layers 25 with high impurity concentrationcan be formed, and thus, the LDD (Lightly Doped Drain) structure can beobtained. Similarly, by doping an (n-type) impurity such as arsenic intothe region between the sidewalls 24 of the adjacent gate electrodes 19,n-type impurity diffusion layers (n-type semiconductor region) 26 withhigh impurity concentration can be formed, and thus, the LDD (LightlyDoped Drain) structure can be obtained.

Then, a silicide layer 27 is formed by a known salicide method usingcobalt. More specifically, a cobalt (Co) film is deposited on thesemiconductor substrate 1 and the thermal treatment is performed,thereby forming a silicide layer 27 on the selection gate 18 and thegate electrode 19 and on the impurity diffusion layers 25 and 26.Thereafter, the unreacted cobalt film is removed. Note that, by formingthe spacer 23 without the patterning process and then depositing a thinoxide film, it becomes possible to limit the portion where the silicideis to be formed. Consequently, the finer process can be realized.

Next, as shown in FIG. 13, an interlayer insulator (insulator) 28 madeof silicon oxide is formed above the semiconductor substrate 1. Then,contact holes 29 are formed in the interlayer insulator 28 by using thephotolithography method and the dry etching method. At the bottom of thecontact holes 29, some parts of the main surface of the semiconductorsubstrate 1, for example, a part of the impurity diffusion layers 20,25, and 26 (or the silicide layer 27 thereon) and a part of the gateelectrodes 17, 18, and 19 (or the silicide layer 27 thereon) areexposed.

Next, plugs 30 made of tungsten (W) are formed in the contact holes 29.The plug 30 can be formed in the manner as follows. That is, a titaniumnitride film serving as a barrier film is formed on the interlayerinsulator 28 including the inner surface of the contact holes 29, andthen, a tungsten film is formed on the titanium nitride film by the CVDmethod so as to fill the contact holes 29. Thereafter, the unnecessarytungsten film and the titanium nitride film on the interlayer insulator28 are removed by the CMP method or the etch-back method.

Next, an interlayer insulator 31 is formed on the interlayer insulator28 in which the plugs 30 are embedded. Then, wiring openings 32 areformed in the interlayer insulator 31 by using the photolithographymethod and the dry etching method. Thereafter, a barrier insulator madeof titanium nitride and a copper film are formed on the interlayerinsulator 31 so as to fill the wiring openings 32, and then, the CMPmethod is performed to polish the films. In this manner, wirings (firstlayer wiring) 33 are formed in the wiring openings 32. The wirings 33are electrically connected to the impurity diffusion layers 20, 25, and26 and the gate electrodes 17, 18, and 19 via the plugs 30. The wiring33 made of aluminum is also available. For example, the aluminum wiringcan be formed by depositing a titanium film, a titanium nitride film, analuminum film, a titanium film, and a titanium nitride film on theinterlayer insulator 28 and patterning the films by using thephotolithography method.

Thereafter, upper wirings and the like are formed according to need.However, the description for the process is omitted here. As describedabove, the non-volatile semiconductor memory device (semiconductordevice) according to this embodiment is fabricated.

FIG. 14 is a plan view (layout diagram) of a memory cell array in whichmemory cells of the non-volatile semiconductor memory device accordingto this embodiment are arranged in a matrix form, which shows thetypical layout of the components.

In FIG. 14, the typical layout is shown with a focus on the shuntportion (connection portion) with the wiring layer. Two memory cells arearranged along the lateral direction in the memory cell region A1 shownin the sectional view of FIG. 13. However, in the plan view of FIG. 14,four memory cells are arranged along the lateral direction of FIG. 14,and two lines of four memory cells, that is, a total of eight memorycells are arranged in the plan view of FIG. 14. Note that boundaries 41of the cells corresponding to those of the upper four cells (memorycells) are shown in FIG. 14. Also, the metal layers (wiring and plug)are omitted and only the contact holes are shown.

In FIG. 14, active regions 42 and the selection gates 18 are shown.Also, though not shown in FIG. 14, the memory gate 17 is formed on theone of the sidewalls of the selection gate 18 as described above, andthe memory gate is extended by the extension portion 43 through thecontact hole 44 for the memory gate. Therefore, in FIG. 14, the memorygate 17 (not shown) is formed on the sidewall of the selection gate 18on the side where the extension portion 43 is provided. Note that theextension portion 43 of the memory gate corresponds to the portionobtained by forming a photoresist pattern on the polycrystalline siliconfilm 16 so as to prevent the etching of the polycrystalline silicon film16 in the process shown in FIG. 10 in which the polycrystalline siliconspacer 17 a (memory gate 17) is formed on the side surface of theselection gate 18 by the etch back of the polycrystalline silicon film16. The selection gate 18 is extended through the contact hole 45 forthe selection gate, and the region corresponding to the impuritydiffusion layer 20 in the active region 42 is extended through thecontact hole 46 for the source. FIG. 14 corresponds to the layout in thecase where the impurity diffusion layer 26 (impurity diffusion layer 21)on the side close to the selection gate is used as a common component.

FIG. 15 is a plan view showing another example of the memory cell arrayof the non-volatile semiconductor memory device according to anotherembodiment, in which the same components as those shown in FIG. 14 areshown. FIG. 14 shows the layout in which the impurity diffusion layer(impurity diffusion layer 21, 26) on the side close to the selectiongate 18 is used as a common component, and FIG. 15 shows the layout ofthe same cells in which the impurity diffusion layer (impurity diffusionlayer 20) on the side of the memory gate is used as a common component.Also in FIG. 15, though not shown, the memory gate 17 is formed on thesidewall of the selection gate 18 on the side where the extensionportion 43 is provided. Since the other constitution is almost equal tothat of FIG. 14, the description thereof is omitted here.

FIG. 16 is a (enlarged) sectional view showing the principal part of thememory cell structure of the non-volatile semiconductor memory device(semiconductor device) according to this embodiment. One of the twomemory cell structures formed in the memory cell region A1 in the manneras shown in FIGS. 1 to 13 is schematically shown in FIG. 16. Also, thep-type well 2, the gate insulator 6, the laminated film 15, the memorygate. 17, the selection gate 18, the impurity diffusion layer 20, andthe impurity diffusion layer 21 (impurity diffusion layer 26) are shownin FIG. 16, and the illustration of other components such as thesidewall 24 formed on the sidewall opposite to the memory gate 17 of theselection gate 18 is omitted for easy understanding.

As shown in FIG. 16, the memory cell of the non-volatile semiconductormemory device according to this embodiment is formed by connecting twoMISFETs stacked vertically, each of which is comprised of the selectiongate 18 and the memory gate 17. The laminated film 15 which is an ONO(Oxide Nitride Oxide) laminated film is used as the gate insulator ofthe memory gate 17, and thus, the so-called MONOS (Metal Oxide NitrideOxide Semiconductor) structure is formed. Therefore, it is possible tohold the electric charge in the laminated film 15. The channel portion(channel region) located between the impurity diffusion layer 20 and theimpurity diffusion layer 21 (impurity diffusion layer 26) is comprisedof a region (first channel region) 51 below the selection gate 18controlled by the selection gate 18 and a region (second channel region)52 below the memory gate 17 controlled by the memory gate 17. Morestrictly, (the region corresponding to) the region sandwiched betweenthe two gates (memory gate 17 and selection gate 18) is formed (in thechannel region), and this region can be made extremely thin with thethickness equal to that of the ONO film (laminated film 15).

The typical operation of the memory cell structure shown in FIG. 16 willbe described. Note that the potential of the impurity diffusion layer 20serving as the source is defined as Vs, the potential of the memory gate17 is defined as Vmg, the potential of the selection gate 18 is definedas Vcg, and the potential of the impurity diffusion layer 21 (impuritydiffusion layer 26) serving as the drain is defined as Vd.

The potentials in the writing operation are: Vs=5 V, Vmg=10 V, Vcg=0.4V, and Vd=0 V. The electrons can be injected into (the silicon nitridefilm 15 b of) the laminated film 15 (below the memory gate 17) in theappropriate memory cells by applying the potentials as a pulse for, forexample, 10⁻⁶ seconds. More specifically, it is possible to inject theelectrons into the laminated film 15 by applying the potential higherthan that of the impurity diffusion layer 21 to the impurity diffusionlayer 20 and applying the potential higher than that of the impuritydiffusion layer 20 to the memory gate 17.

The potentials in the erasing operation are: Vs=8 V, Vmg=−6 V, Vcg=0 V,and Vd=0 V. The holes (hot holes) can be injected into (the siliconnitride film 15 b of) the laminated film 15 in the appropriate memorycells by applying the potentials as a pulse for, for example, 10⁻⁴seconds. More specifically, it is possible to inject the holes into thelaminated film 15 by applying the potential lower than that of theimpurity diffusion layer 20 to the memory gate 17. In this case, Vcg isset to 0 V. However, it is also possible to inhibit the injection of theholes by applying the positive potential as Vcg. In addition, it is alsopossible to reduce the channel leakage current by setting Vd to be thefloating potential.

The potentials in the reading operation are: Vs=0 V, Vmg=1.5 V, Vcg=1.5V, and Vd=1.5 V. More specifically, the channel below the selection gate18 is turned-on by applying the potential higher than that of theimpurity diffusion layer 20 to the impurity diffusion layer 21 andapplying the positive potential to the selection gate, and then, theintermediate potential between the threshold value of the writingoperation and the threshold value of the erasing operation is applied asthe potential of the memory gate 17. By doing so, the memory cell towhich the electrons are written (injected) maintains the off state, butthe memory cell in which the holes are held is turned on. Morespecifically, in the memory cell in which the electrons are injected inthe laminated film 15 (by the writing operation) and the thresholdvoltage of the memory gate 17 is increased, little readout current flowsbetween the impurity diffusion layer 20 and the impurity diffusion layer21 (impurity diffusion layer 26). On the other hand, in the memory cellin which the holes are injected in the laminated film 15 (by the erasingoperation) and the threshold voltage of the memory gate 17 is decreased,certain readout current flows between the impurity diffusion layer 20and the impurity diffusion layer 21 (impurity diffusion layer 26).

As described above, when the electrons and the holes are injected in thelaminated film 15 by the writing operation and the erasing operation,the characteristics (dependency) between the current flowing between theimpurity diffusion layer 20 and the impurity diffusion layer 21(impurity diffusion layer 26) and the voltage of the memory gate 17 canbe changed due to the electric charge held by the carriers injected inthe laminated film 15.

In this manner, since it is possible to rewrite the charge data by theuse of the carriers of both types (electrons and holes) in the structureof this embodiment, the charge data can be easily read out. Morespecifically, it is possible to increase and decrease the thresholdvalue in comparison to the initial state and the state having noinjection charge. Therefore, it is possible to perform the readingoperation keeping the memory gate to the holding state. By setting theholding/reading potential of the memory gate to the ground potential,the potential control of the memory gate can be facilitated.

In the state of the memory erasing operation, the holes are stronglyaccumulated in the region 52. This state is shown in FIG. 17 in whichthe edge portion of the memory gate on the side close to the impuritydiffusion layer 20 is enlarged. FIG. 17 is a partially enlargedsectional view showing the edge portion of the memory gate 17 on theside close to the impurity diffusion layer 20 in the memory cellstructure in FIG. 16. In the erasing state, the positive potential isapplied to the impurity diffusion layer 20 and the negative potential isapplied to the memory gate 17. The depletion layer formed (generated) atthis time in the semiconductor substrate (p-type well 2) isschematically shown in FIG. 17. In FIG. 17, the region sandwichedbetween the boundary 53 a and the boundary 53 b indicating the edges ofthe depletion layer is the depletion layer. At this time, the holes arestrongly accumulated via the gate insulator (laminated film 15) in thechannel region 54 located outside the boundary 53 a (i.e., outside thedepletion layer). Considering the movement of the holes in the erasingoperation, the holes generated at the edge portion (region around theedge portion) 20 a of the impurity diffusion layer 20 are injected intothe gate (gate insulator, laminated film 15). In order to inject theholes so as to expand in the channel direction, it is necessary to movethe holes in the channel direction (lateral direction, directionparallel to the main surface of the semiconductor substrate 1, directionfrom the impurity diffusion layer 20 to the impurity diffusion layer21).

For the description of the state, a sample device is fabricated in themanner as follows. That is, the channel length (gate length) Lcg of theselection gate 18 is fixed and the channel length (gate length) Lmg ofthe memory gate 17 is varied as a parameter, and also, since the chargeholding portion (gate insulator) has a laminated structure of oxidefilms and a nitride film, a silicon oxide film, a silicon nitride film,and a silicon oxide film are laminated to form the memory cell. The factthat hole injection length by the lateral acceleration can be changed isdemonstrated by the experiment using the sample devices, which is shownin the graphs of FIGS. 18 to 20. In the graphs of FIGS. 18 to 20, thereadout current at the time when the current is allowed to flow byinjecting the holes into the memory cell (performing the erasingoperation) is plotted with using the channel length (gate length) Lmg ofthe memory gate as a parameter. FIGS. 18 to 20 show the erasingoperation characteristics, in which the horizontal axis represents theerasing operation time and the vertical axis represents the readoutcurrent (in this case, current flowing between the impurity diffusionlayer 20 and the impurity diffusion layer 21) at the time afterperforming the erasing operation, and each of them is described based onthe arbitrary unit. In each of the graphs in FIGS. 18 to 20, themeasurement of the erasing operation characteristics is performed whilechanging the potential Vs of the impurity diffusion layer 20 (source) atthe time of the erasing operation (hole injection) performed before thereading operation. In this case, the erasing operation is perforatedunder the conditions that Vmg is set to −7 V and Vs is set to 4 V (FIG.18), 6 V (FIG. 19), and 8 V (FIG. 20) respectively. In each of thegraphs in FIGS. 18 to 20, the case where the channel length Lmg of thememory gate is variously changed is shown. When the potential Vs at theerasing operation is small (in the case of FIG. 18), the readout currentis generated only in the case where the channel length Lmg of the memorygate is short. However, when the potential Vs at the erasing operationis increased (in the case of FIGS. 19 and 20), the readout current canflow even in the case where the channel length Lmg of the memory gate islong. In addition, the current can flow even in the short-time erasingoperation. This means that the holes can be injected into the entirememory gate by increasing the potential Vs at the erasing operation.More specifically, this means that, when the field in the horizontaldirection is increased by applying the high voltage to the memory gateand the field in the horizontal direction (lateral direction, field inparallel to the main surface of the semiconductor substrate 1) at theedge portion of the impurity diffusion layer (region around the edgeportion of the impurity diffusion layer 20) is increased, the generatedholes are accelerated in the channel direction, and as a result, itbecomes possible to obtain the good erasing efficiency.

Also, considering the above-mentioned phenomenon in the practicaldevice, the channel impurity profile (impurity profile in the channelregion) becomes the critical problem. More specifically, since theselection transistor gains the large readout current, it is preferablethat the selection transistor has a gate insulator with a smallthickness. Meanwhile, since the memory transistor holds the charge inits gate insulator, it has a laminated structure with a large thickness.Therefore, if the channel region of the selection transistor and thechannel region of the memory transistor are set to have the samesubstrate impurity profile, the problem that the threshold value of thememory transistor becomes extremely high occurs due to the largethickness of the gate insulator. Thus, for obtaining the structure ofthe substrate/impurity diffusion layer with good erasing efficiency, itis important to establish the fabrication process by which the substratestructure (impurity profile) of the selection transistor and the memorytransistor can be independently controlled.

This embodiment is characterized in that it is possible to minutelycontrol the electric field below the memory gate 17 (region 52 in FIG.16). The charge density of an impurity (impurity concentration) in theregion 51 below the selection gate 18 can be controlled and determineddepending on the impurity concentration introduced when forming thep-well 2. In addition, it is also possible to further control anddetermine the charge density of the impurity (impurity concentration) inthe region 51 below the selection gate 18 by the ion implantation of theimpurity 11. Alternatively, it is also possible to further control anddetermine the charge density of the impurity (impurity concentration) inthe region 51 below the selection gate 18 by performing the ionimplantation at the step shown in FIGS. 4 and 5.

Note that the charge in the depletion layer of the p-type impurity dopedin the semiconductor region is negative and the charge of the n-typeimpurity is positive. Accordingly, if the impurities doped in a certainsemiconductor region are the impurities with the same conductivity type,the polarity of the charges thereof is also the same. Therefore, thecharge density of the impurity in the semiconductor region is equal tothe total of the impurity concentrations. Meanwhile, if the impuritieshave the opposite conductivity types, the charges are canceled by eachother. Therefore, the charge density of the impurity corresponds to thedifference between the impurity concentration of one conductivity typeand the impurity concentration of the other conductivity type. Thus, thecharge density of the impurity corresponds to the impurity concentrationwhen only one type of the impurity is doped. When several types of theimpurity are doped, the charge density corresponds to the total of theimpurity concentrations if the impurities have the same conductivitytype, and the charge density corresponds to the difference in theimpurity concentration between the impurity concentration of the oneconductivity type and the impurity concentration of the otherconductivity type if impurities have different conductivity types. Forexample, in the case where an n-type impurity (e.g., phosphorus) isdoped with the concentration of 10¹⁸/cm³ and another n-type impurity(e.g., arsenic) is doped with the concentration of 3×10¹⁷/cm³, thecharge density of the impurity is the total of the impurityconcentrations, that is, 1.3×10¹⁸/cm³. Also, in the case where an n-typeimpurity (e.g., phosphorus) is doped with the concentration of 10¹⁸/cm³and a p-type impurity (e.g., boron) is doped with the concentration of3×10¹⁷/cm³, the charge density of the impurity is the difference betweenthe impurity concentrations, that is, 7×10¹⁷/cm³. Note that, in the casewhere the valence of the charge of the doped impurity is 2 or more, thecharge density of the impurity can corresponds to that obtained bymultiplying the impurity concentration by the valence. Since theconcentration of the n-type impurity is higher in the above-mentionedtwo examples, the regions function as n-type regions. When both then-type impurity and the p-type impurity exist, the impurities arecanceled by each other and thus only the difference therebetween canfunction as the actual impurity (donor or acceptor). Therefore, it canbe considered that the charge density of the impurity corresponds to theactual impurity concentration in the semiconductor region.

Meanwhile, the charge density of the impurity (impurity concentration)in the region 52 below the memory gate 17 can be controlled anddetermined by patterning the polycrystalline silicon film 7, thepolycrystalline silicon film 12, and the silicon oxide film 13 as shownin FIG. 6, and then, performing the ion implantation of the impurity 14with using (the laminated film of) the patterned polycrystalline siliconfilm 7, the polycrystalline silicon film 12, and the silicon oxide film13 as a mask which is to be the selection gate 18.

In the ion implantation of the impurity 14, the impurity 14 is notintroduced (injected) into the region 51 below the selection gate 18because the polycrystalline silicon film 7, the polycrystalline siliconfilm 12, and the silicon oxide film 13 formed thereon function as themask. Consequently, in this embodiment, it is possible to differentiatethe charge density of the impurity (impurity concentration) in theregion 51 below the selection gate 18 from the charge density of theimpurity (impurity concentration) in the region 52 below the memory gate17.

The charge density of the impurity (impurity concentration) in theregion (channel region) 52 below the memory gate 17 is preferably set to10¹⁷ to 10¹⁸/cm³, more preferably set to 3×10¹⁷/cm³ to 7×10¹⁷/cm³, andset to, for example, about 5×10¹⁷/cm³. The increase of the chargedensity of the impurity (impurity concentration) in the region 52 belowthe memory gate 17 is preferable because the energy gradient (generatedby the PN junction) between the impurity diffusion layer 20 and theregion 52 can be made steep (the electric field can be increased) andthe lateral (direction parallel to the main surface of the semiconductorsubstrate 1, channel direction, direction of the channel length)movement of the holes from the impurity diffusion layer 20 to the region52 can be facilitated. However, if the charge density of the impurity(impurity concentration) in the region 52 is excessively increased, thethreshold value is decreased and the readout value after the erasing maybecome insufficient as the current value. Therefore, it is preferable toset the charge density of the impurity (impurity concentration) in theregion 52 within the range described above.

Also, the charge density of the impurity in the region (first channelregion) 51 below the selection gate 18 is preferably higher (larger)than the charge density of the impurity in the region (second channelregion) 52 below the memory gate 17, and is set to, for example, about10¹⁸/cm³. If the impurity 14 having the conductivity type opposite tothat of the region 51 (conductivity type of the impurity) ision-implanted (to the region 52) with using the polycrystalline siliconfilm 7, the polycrystalline silicon film 12, and the silicon oxide film13 on the region 51 as a mask, the charge density of the impurity in theregion 52 to which the impurity 14 is introduced can be set lower thanthe charge density of the impurity in the region 51 to which theimpurity 14 is not introduced. For example, the already-introducedp-type impurity (impurity functioning as an acceptor) is partiallycanceled by the n-type impurity (impurity functioning as a donor)ion-implanted into as the impurity 14 in the region 52. By doing so, thecharge density of the impurity equivalent to the actual impurityconcentration in the region 52 can be set lower than that in the region52. In this case, the dose amount of the impurity 14 is: adjusted so asto prevent that the ion implantation amount of the impurity 14 is tooexcessive and the conductivity type of the region 52 (p-type in thiscase) is changed to the opposite conductivity type (n-type in thiscase). Therefore, when the p-type impurity is introduced (doped) intothe region 51 and the p-type impurity and the n-type impurity areintroduced (doped) into the region 52, the charge density of theimpurity in the p-type region 52 can be set lower than the chargedensity of the impurity in the p-type region 51. In addition, since thecharge density of the impurity (impurity concentration) in the impuritydiffusion layer 20 is higher in comparison to those in the region 51 andthe region 52, the charge density, can be almost determined by theimpurity concentration introduced (ion-implanted) for forming theimpurity diffusion layer 20 in the process shown in FIG. 11.

Since the selection transistor (having the selection gate as itscomponent) gains a large readout current, it is preferable to reduce thethickness of the gate insulator (gate insulator 6 below the selectiongate 18). Meanwhile, since the memory transistor (having the memory gate17 as its component) holds the charge in the gate insulator thereof, thegate insulator (laminated film 15 below the memory gate 17) thereof hasa laminated structure with a large thickness composed of, for example, asilicon oxide film, a silicon nitride film, and a silicon oxide film.Therefore, the thickness of the gate insulator below the memory gate 17,that is, the thickness of the laminated film 15 in this case isrelatively larger than the thickness of the gate insulator below theselection gate 18, that is, the thickness of the gate insulator 6 inthis case. Accordingly, if the charge density of the impurity (impurityconcentration) in the region 51 below the selection gate 18 is set equalto the charge density of the impurity (impurity concentration) in theregion 52 below the memory gate 17, the problem that the threshold valueof the memory transistor (memory gate 17) is extremely increased occursbecause the gate insulator (laminated film 15) of the memory transistoris thicker than the gate insulator (gate insulator 6) of the selectiontransistor.

In this embodiment as described above, the charge density of theimpurity (impurity concentration) in the region 51 below the selectiongate 18 is not equal to the charge density of the impurity (impurityconcentration) in the region 52 below the memory gate 17, and the chargedensity of each impurity (impurity concentration) can be adjusted to adesirable value by adjusting the conductivity type of the impurities atthe time of the ion implantation and the implantation amount (doseamount) of the impurities. For example, as described above, the chargedensity of the impurity in the region (channel region) 51 below theselection gate 18 can be set higher than the charge density of theimpurity in the region 52 below the memory gate 17. When the chargedensity of the impurity in the region 51 controlled by the selectiongate 18 via a thinner gate insulator 6 is set relatively high and thecharge density of the impurity in the region 52 controlled by the memorygate 17 via a laminated film 15 thicker than the gate insulator 6 is setrelatively low, it is possible to prevent the problem that the thresholdvalue of the memory transistor (memory gate 17) is extremely increased.In addition, the charge density of the impurity (impurity concentration)in the region 52 below the memory gate 17 can be adjusted to a desirablevalue independently of the charge density of the impurity (impurityconcentration) in the region 51 below the selection gate 18, and itbecomes possible to facilitate the movement of the holes in the lateraldirection (direction parallel to the main surface of the semiconductor1, channel direction, direction of the channel length) from the impuritydiffusion layer 20 to the region 52. Furthermore, when the chargedensity of the impurity (impurity concentration) in the region 52 belowthe memory gate 17 is set to the optimum concentration for facilitatingthe movement of the holes in the lateral direction from the impuritydiffusion layer 20 to the region 52, it becomes possible to improve theerasing efficiency.

Also, it is effective to set the threshold value of the selection gate18 to be low so as to prevent the problem that the threshold value ofthe memory gate 17 (memory transistor) is influenced by the setting ofthe threshold value of the selection gate 18 (selection transistor).This can be achieved by reducing the charge density of the impurity(impurity concentration) in the channel. However, the reduction of thethreshold value of the selection gate 18 causes the problem of theincrease of the leakage (leakage current) at the time of the readingoperation. For such a problem, the leakage can be reduced by shiftingthe potential of the selection gate (Vcg) not selected at the time ofthe reading operation to the negative side (set to the negativepotential). In addition, if the potential of the diffusion layer is sethigher in comparison to that of the selection gate at the time of thereading operation, the same effect as that in the case of applying thenegative potential can be obtained. Therefore, it becomes unnecessary togenerate the negative potential in a driver circuit of the selectiongate 18. In addition, it is also possible to reduce the leakage byapplying the negative potential to the semiconductor substrate at thetime of the reading operation, that is, by the so-called back biaseffect. In this case, since the doping amount of the impurity into thechannel region below the memory gate 17 is small, it is possible to formthe impurity diffusion layer and the channel distribution (impurityprofile in the channel region) ideal for the memory gate 17.

FIG. 21 is a sectional view schematically showing the state of thecarriers injected in the memory cell shown in FIG. 16. In the memorycell structure of this embodiment, some of the holes are left on theside close to the impurity diffusion layer 20 and some the electrons 62are left on the side close to the selection gate 18 as described above(disproportional distribution). In this case, in the manner opposite tothe above-mentioned example, Vs is set to 1 V and the Vd is set to 0 V(apply the potential higher than that of the impurity diffusion layer 21to the impurity diffusion layer 20) at the time of the readingoperation. By doing so, it becomes possible to effectively read thedata. More specifically, in FIG. 21, the channel (channel region) 63corresponds to the region 51 in FIG. 16, the channel (channel region) 64corresponds to the channel region 54 in FIG. 17, the boundary betweenthe channel and the channel (channel region) 65 corresponds to theboundary 53 a in FIG. 17, and the combined region of the channel 64 andthe channel 65 corresponds to the region 52 in FIG. 16. When theimpurity diffusion layer 21 (impurity diffusion layer 26, impuritydiffusion layer on the side close to the selection gate 18) is operatedas a source and the impurity diffusion layer 20 (impurity diffusionlayer on the side close to the memory gate 17) is operated as a drain(at the time of reading operation) (when the potential higher then thatof the impurity diffusion layer 21 is applied to the impurity diffusionlayer 20), since the electrons are present in the edge portion of thesource (on the source side), it is possible to change the thresholdvalue. Also, since the boundary 53 a (boundary between the channel 64and the channel 65) is extended, the region damaged by the holeinjection is covered with the depletion layer. Therefore, it becomespossible to conceal the influence of the characteristics at the(damaged) interface. Also, since the channel 64 becomes extremely shortat the time of the erasing (at the time of the erasing operation), itbecomes possible to carry the large current.

FIG. 22 is a sectional view schematically showing the state around theedge portion of the memory gate 17 after the erasing (after the erasingoperation, after the hole injection). FIG. 22 corresponds to the case inwhich the holes are injected into (the laminated film 15 of) thestructure in FIG. 17. Since the holes are generated in the edge portionof the impurity diffusion layer 20 (in the region around the edgeportion), holes 71 are injected in the part of the laminated film 15(laminated insulator) ranging from directly above the edge portion ofthe impurity diffusion layer 20 to the channel. Therefore, as shown inFIG. 21, the edge portion of the depletion layer represented by theboundary 53 a protrudes due to the electric charge of the holes 71 inthe channel direction in comparison to the case in FIG. 17 (before thehole injection). Accordingly, the expansion (width in the lateraldirection in FIG. 22) of the depletion layer (the region sandwichedbetween the boundary 53 a and the boundary 53 b) becomes large, andthus, the electric field in the lateral direction (electric field in thedirection parallel to the main surface of the semiconductor substrate 1)is reduced.

FIG. 23 schematically shows the potential distribution (energy bandstructure) along the line C-C in FIG. 22. In FIG. 23, the illustrationof the laminated structure is omitted for the explanation of theelectric field at the channel interface. That is, the potentialdistribution in the case where the laminated film 15 is formed as asingle layer is shown for easy understanding. The horizontal axis of thegraph in FIG. 23 corresponds to the distance or the position (arbitraryunit) in the thickness direction (direction vertical to the main surfaceof the semiconductor substrate 1) and the vertical axis of the graph inFIG. 23 corresponds to the energy band, in which the energy level Ec atthe lower edge of the conductive band and the energy level Ev at theupper edge of the valence band at each position are shown. Actually, inthe laminated film 15 comprised of a silicon oxide film, a siliconnitride film, and a silicon oxide film, the potential barrier height ofthe silicon nitride film being the inner (intermediate) layer is lowerin comparison to the potential barrier height of the silicon oxide filmbeing the outer layer.

Since the hole charge exists in the laminated insulator (laminated film15) and the interface, the potential distribution in the insulator(laminated film 15) is shifted by the amount 81 shown by the arrow inFIG. 23, and also, the potential distribution in the semiconductorsubstrate (impurity diffusion layer 20) is shifted by the amount 82shown by the arrow, and thus, the electric field in the verticaldirection is also shifted and weakened. Accordingly, when the erasing(erasing operation) is performed, the generation of the holes isreduced, and the acceleration in the lateral direction by the electricfield is also reduced. As a result, the erasing operation is notperformed appropriately.

For its solution, the erasing pulse (in the erasing operation) isapplied in twice (alternatively, several times more than twice). FIGS.24 to 27 are the graphs of the voltage pulse applied at the time of theerasing operation. In FIGS. 24 to 27, the potential at each terminal isshown and the example of the operation timing is shown as the pulseshape. In FIG. 24, the erasing pulse (voltage pulse applied at the timeof the erasing operation) with Vmg=−6 V and Vs=8 V is applied twice.When the erasing pulse (e.g., the voltage pulse for applying thenegative potential to the memory gate 17 and applying the positivepotential to the impurity diffusion layer with setting the groundpotential to the semiconductor substrate 1) is applied in twice orseveral times more than twice as described above, the holes trapped inthe extremely shallow level in the surface are removed, and thus, itbecomes possible to intensify the electric field, and also possible tofurther improve the erasing efficiency.

Also, as shown in FIG. 25, by applying the positive potential to Vmg(memory gate 17) (e.g., Vmg=2 V) before the erasing pulse, it becomespossible to perform the erasing operation under the condition that theholes on the surface are reduced and the electric field is intensified.In this manner, it is possible to further improve the erasingefficiency. In addition, as shown in FIG. 26; it is also possible toeffectively remove the holes by taking the extremely weak writing stateat the edge portion of the source (impurity diffusion layer 20) (beforeapplying the erasing pulse).

Furthermore, by applying the negative potential to Vmg (memory gate 17)(e.g., Vmg=−6 V) after applying the erasing pulse as described in FIG.27, it becomes possible to move the unstable holes near the interface ofthe silicon oxide film (lowermost layer of the laminated film 15) to themore stable position. By doing so, it is possible to further improve theerasing efficiency. At this time, since it is unnecessary to generatethe holes, Vs is held to the ground potential or the potential notgenerating the holes. In this manner, it is possible to save the powerconsumption.

In the above-described example, the case where pulses are appliedseveral times has been described. For example, after the writingoperation with Vmg=10 V, Vs=5 V, Vd=0 V, and Vcg=0.4 V, the potentialof, for example, 12 V is applied only to Vmg. By doing so, it ispossible to achieve more stable charge distribution than that just afterthe injection without applying the channel current. In this manner, itis possible to further reduce the change with time in the held charge.The same effect can be achieved also in the erasing operation.

Second Embodiment

FIGS. 28 to 31 are sectional views showing the principal part of thenon-volatile semiconductor memory device (semiconductor device) in thefabrication process according to another embodiment of the presentinvention, in which the fabrication process of the polycrystallinesilicon spacer 17 b functioning as the memory gate 17 of the memorytransistor is described. Since the fabrication process in thisembodiment is identical to that in the first embodiment till the stepshown in FIG. 7, the description thereof is omitted here.

After forming the structure shown in FIG. 7, a polycrystalline siliconfilm 16 a doped with phosphorus is deposited above the entire surface ofthe semiconductor substrate 1 by the CVD method as shown in FIG. 28. Thethickness of the deposited polycrystalline silicon film 16 a is smallerthan that of the polycrystalline silicon film 16 in the firstembodiment. Then, a p-type impurity 91 (e.g., boron) is ion-implanted(ion implantation) with using the laminated film of the polycrystallinesilicon film 7, the polycrystalline silicon film 12, and the siliconoxide film 13 (laminated structure for forming the selection gate 18)and the polycrystalline silicon film 16 a thereon and on the sidewallsthereof as a mask. The case where the impurity 91 is ion-implanted isschematically shown in FIG. 28. However, the illustration of theion-implanted impurity 91 is omitted in FIG. 29 and the subsequentdrawings.

Next, as shown in FIG. 29, a polycrystalline silicon film 16 b dopedwith phosphorus is deposited above the entire surface of thesemiconductor substrate 1 by the CVD method. The total thickness of thepolycrystalline silicon film 16 a and the polycrystalline silicon film16 b corresponds to the deposition thickness of the polycrystallinesilicon film 16 in the first embodiment and it is about 100 nm.

Then; as shown in FIG. 30, the polycrystalline silicon films 16 a and 16b are etched (dry etching, anisotropic etching, etch back) by thethickness of the polycrystalline silicon films 16 a and 16 b (about 100nm in this case). By doing so, polycrystalline silicon spacers 17 b tobe the memory gates (gate electrode) 17 are formed on the side surfaceof the selection gates. In this manner, the structure shown in FIG. 30can be obtained. The structure shown in FIG. 30 corresponds to thestructure shown in FIG. 10 in the first embodiment. As described above,the polycrystalline silicon spacer 17 a in the first embodiment iscomprised of a single layer of the polycrystalline silicon film 16.However, the polycrystalline silicon spacer 17 b in this embodiment iscomprised of (a laminated film of) the two layers of the polycrystallinesilicon films 16 a and 16 b.

After the polycrystalline silicon film 17 b is formed, thepolycrystalline silicon film 7, the polycrystalline silicon film 12, thesilicon oxide film 13, and the laminated film 15 are selectively removedin the same manner as that in the first embodiment as shown in FIG. 31,thereby forming the selection gate (gate electrode) 18 and the gateelectrodes 19 of the peripheral transistors (transistors formed in thehigh breakdown voltage device region A2 and the device region A3).Subsequently, an n-type impurity such as arsenic is doped by using theion implantation with using the memory gate 17, the selection gate 18,and the gate electrode 19 as the mask, thereby forming the impuritydiffusion layers (impurity diffusion layer electrode) 20, 21, and 22 tobe the source and drain (source and drain electrodes). Since thesubsequent process in this embodiment is almost identical to thefabrication process in the first embodiment shown in FIG. 12 and thesubsequent drawings, the description thereof is omitted here.

FIG. 32 is a partially enlarged sectional view of the non-volatilesemiconductor memory device at the fabrication process shown in FIG. 29.In this embodiment, in the region (corresponding to the region 52 inFIG. 16) below the memory gate 17, the charge density of the impurity(impurity concentration) in the region 52 a on the side close to theselection gate 18 is not equal to the charge density of the impurity(impurity concentration) in the region 52 b on the side close to theimpurity diffusion layer 20 (adjacent to the impurity diffusion layer20) as shown in FIG. 32.

The charge density of the impurity (impurity concentration) in theregion 52 a can be adjusted and determined by controlling the amount(dose amount) of the ion implantation (of the impurity 14) performedafter patterning the silicon oxide film 13, the polycrystalline siliconfilm 12, and the polycrystalline silicon film 7 to expose the regionwhere the memory gate is to be formed and before forming thepolycrystalline silicon film 16 a. The impurity 14 is introduced to theregions 52 a and 52 b in this ion implantation (the impurity 14 is notintroduced to the region 51 below the selection gate 18). Similar to thefirst embodiment, the charge density of the impurity in the region 52 acan be made lower than that in the region 51 by using the n-typeimpurity as the impurity 14.

The charge density of the impurity (impurity concentration) in theregion 52 b can be adjusted and determined by controlling the amount(dose amount) of the ion implantation of the impurity 91 performed afterforming the polycrystalline silicon film 16 a and before forming thepolycrystalline silicon film 16 b. The impurity 91 is not introduced tothe region 52 a in this ion implantation. This is because the thicknessof the polycrystalline silicon film 16 in the direction vertical to themain surface of the semiconductor substrate 1 is increased and functionsas a mask in the portion above the region 52 a ((because the laminatedstructure for forming) the selection gate 18 and the polycrystallinesilicon films 16 a on the sidewalls thereof function as the mask.). Forexample, the charge density of the impurity (impurity concentration) inthe region 52 b can be set higher than that in the region 52 a.

Accordingly, since the p-type impurity is introduced (doped) to theregion 51 and the p-type impurity and the n-type impurity are introduced(doped) to the region 52 a and the region 52 b, the p-type impurityconcentration in the region 52 b becomes higher than the p-type impurityconcentration in the region 52 a. Therefore, the charge density of theimpurity in the p-type region 52 b can be set higher than the chargedensity of the impurity in the p-type region 52 a, and the chargedensity of the impurity in the p-type region 52 a can be set lower thanthe charge density of the impurity in the p-type region 51.

In this manner, by increasing the p-type impurity 15 concentration inthe region 52 b in order to increase the electric field (in the lateraldirection by the PN junction with the impurity diffusion layer 20) andreducing the impurity concentration or doping the impurity with theopposite conductivity type (n-type impurity) into the region 52 a tocancel the impurities in the channel region, (the charge density of theimpurity is reduced and thus) the threshold value (of the memory gate17) can be reduced. More specifically, by setting the p-type impurityconcentration (charge density of the impurity) in the region 52 brelatively high, the energy gradient (generated by the PN junction)between the impurity diffusion layer and the region 52 b is made steep(the electric field is increased), and thus, the movement of the holesin the lateral direction from the impurity diffusion layer 20 to theregion 52 b can be facilitated. Also, by setting the charge density ofthe impurity in the region 52 a lower than the charge density of theimpurity in the region 52 b, it becomes possible to prevent the increaseof the threshold value of the memory transistor. Consequently, itbecomes possible to minutely control the electric field in the regionbelow the memory gate.

Third Embodiment

FIG. 33 is a sectional view showing the principal part of thenon-volatile semiconductor memory device (semiconductor device) in thefabrication process according to still another embodiment of the presentinvention. Since the fabrication process in this embodiment is identicalto that in the first embodiment till the step shown in FIG. 5, thedescription thereof is omitted here.

In this embodiment, after the process for the selection gate 18, the ionimplantation is performed through the selection gate 18 into the channelsurface below the selection gate 18. In this manner, an impurity layer100 is formed. More specifically, after forming the structure shown inFIG. 5, (a laminated film of) the silicon oxide film 13, thepolycrystalline silicon film 12, and the polycrystalline silicon film 7are selectively etched and patterned by using the photolithographymethod and the dry etching method, thereby forming the selection gates18 in the memory cell region A1 as shown in FIG. 33. Subsequently, ap-type impurity (e.g., boron) is ion-implanted (ion implantation) withusing (the laminated film of) the patterned polycrystalline silicon film7, the polycrystalline silicon film 12, and the silicon oxide film 13 asa mask. At this time, the energy of the ion implantation (implantationdepth) is adjusted so that the impurity can be implanted to the channelregion (surface) below the selection gate 18 through the selection gate18. By this ion implantation, the p-type impurity diffusion layer 100with a relatively high impurity concentration is formed. Since thesubsequent process in this embodiment is almost identical to thefabrication process in the first embodiment shown in FIG. 7 and thesubsequent drawings except that the patterning of the selection gate 18is unnecessary, the description thereof is omitted here.

In the region below the selection gate 18, the impurity diffusion layer100 is formed on the surface of the semiconductor substrate 1.Therefore, it is possible to set the impurity concentration (chargedensity of the impurity) in the channel region below the selection gate18 to be relatively high. Meanwhile, since (the laminated film of) thesilicon oxide film 13, the polycrystalline silicon film 12, and thepolycrystalline silicon film 7 serving as a mask of the ion implantationare not formed in the region where the memory gate 17 is to be formed,the impurity is deeply implanted, and thus, the impurity diffusion layer100 is formed in the relatively deep region of the semiconductorsubstrate 1 (e.g., in the region at the depth equivalent to the totalthickness of the selection gate 18 and the silicon oxide film 13thereon). Therefore, the charge density of the impurity (impurityconcentration) in the channel region below the memory gate 17 formedlater is not influenced by the ion implantation (ion implantation forforming the impurity diffusion layer 100). Accordingly, the chargedensity of the impurity (impurity concentration) in the channel region(region 51) of the selection gate 18 can be set different from thecharge density of the impurity (impurity concentration) in the channelregion (region 52) of the memory gate 17, and the charge density of theimpurity in the channel region of the selection gate 18 can be sethigher than the charge density of the impurity in the channel region ofthe memory gate 17. By doing so (by forming the impurity diffusion layer100), it becomes possible to set the threshold value of the selectiongate 18 without changing the threshold value of the memory gate 17.

Also, since the impurity diffusion layer 100 is formed by the ionimplantation of the impurity with the same conductivity type (p-type inthis case) into the p-type well 2 in this embodiment, the ionimplantation of the impurity with the opposite conductivity type (n-typein this case) into the p-type well 2 is unnecessary. Therefore, theregions below the selection gate and the memory gate can be adjusted tohave a desirable impurity concentration (profile). In addition, since itis possible to determine (form) the selection gate 18 by the singlepatterning process, the variation in the channel length in the selectiongate 18 can be reduced.

Also, in this embodiment, the memory gates 17 (polycrystalline siliconspacers 17 a) are formed on both sides of the selection gate 18.Therefore, by doping the impurity to the high concentration into the oneside of the selection gate 18 (region where the impurity diffusion layer21 is to be formed) after the process (formation) of the selection gate18, the impurity diffusion layer (diffusion layer electrode) 21 isformed, and thus, it becomes possible to prevent the influence from thespacer gate (polycrystalline silicon spacer 17 a) formed on thediffusion layer electrode 21 after the formation of the diffusion layerelectrode 21. In addition, it is also possible to remove the unnecessaryportion of the spacer gates (polycrystalline silicon spacer 17 a) by theuse of the patterning. At this time, since the laminated film 15 with arelatively large thickness is provided under the spacer gate, theunnecessary portion of the spacer gates (polycrystalline silicon spacer17 a) can be easily removed.

Fourth Embodiment

FIG. 34 is a sectional view showing the principal part of thenon-volatile semiconductor memory device (semiconductor device) in thefabrication process according to still another embodiment of the presentinvention, which corresponds to the process step of the first embodimentshown in FIG. 12. Since the fabrication process in this embodiment isidentical to that in the first embodiment till the step shown in FIG.10, the description thereof is omitted here.

In the first embodiment, the spacers 23 are used as the covers(protection insulator) for preventing the short-circuit between thememory gate and the selection gate 18 and the short-circuit between thememory gate and the impurity diffusion layer 20 in the process forforming the silicide layer 27 (salicide process), and the impuritydiffusion layer 20 is also covered with the spacer 23. Since theshort-circuit can be prevented if the insulator spacer is left on theside surface of the memory gate, the spacers 23 a (corresponding to thespacer 23 in the first embodiment) are formed by the etch back(anisotropic etching) of the silicon oxide film for forming the spacersso as to cover the side surfaces of the memory gate 17, and thesilicidation is performed under the condition that almost all of theimpurity diffusion layer 20 is exposed except the region near the memorygate in this embodiment. In this manner, the part of the memory gate 17and the part of the surface portion of the impurity diffusion layer 20are silicided to form the silicide layer 27 as shown in FIG. 34. Thebridging is prevented by the spacers 23 in the first embodiment.However, in the case of the silicide of Ni, the salicidation can beachieved without any bridging.

In the foregoing, the invention made by the inventor of the presentinvention has been concretely described based on the embodiments.However, it is needless to say that the present invention is not limitedto the foregoing embodiments and various modifications and alterationscan be made within the scope of the present invention.

The effect obtained by the typical ones of the inventions disclosed inthis application will be briefly described as follows.

That is, it is possible to provide a non-volatile semiconductor memorydevice with good wiring/erasing characteristics by controlling thecharge density of the impurity in the channel region controlled by theselection gate constituting the memory cell and that in the channelregion controlled by the memory gate.

We claim:
 1. A semiconductor device comprising, a first memory cell anda second memory cell arranged in a first direction; the first memorycell including: a semiconductor substrate; a first gate insulating filmformed over the semiconductor substrate; a first gate electrode formedover the first gate insulating film; a second gate insulating filmincluding an insulating film for charge storage formed over thesemiconductor substrate and over a side wall of the first gateelectrode; and a second gate electrode formed over the second gateinsulating film, adjacent with the first gate electrode through thesecond gate insulating film in the first direction, a first impurityregion formed in the semiconductor substrate and positioned on a secondgate electrode side, the second memory cell including: the semiconductorsubstrate; a third gate insulating film formed over the semiconductorsubstrate; a third gate electrode formed over the third gate insulatingfilm; a fourth gate insulating film including the insulating film forcharge storage formed over the semiconductor substrate and over a sidewall of the third gate electrode; and a fourth gate electrode formedover the fourth gate insulating film, adjacent with the third gateelectrode through the fourth gate insulating film in the firstdirection, the first impurity region positioned on a fourth gateelectrode side, wherein the first gate electrode, the second gateelectrode, the third gate electrode and the fourth gate electrode extendin a second direction perpendicular to the first direction, wherein thesecond gate electrode has a first portion extending toward the fourthgate electrode in the first direction, and wherein the fourth gateelectrode has a second portion extending toward the second gateelectrode in the first direction, and the second gate electrode and thefourth gate electrode are physically separated from each other.
 2. Asemiconductor device comprising the first memory cell and the secondmemory cell according to claim 1, wherein the second gate electrode andthe fourth gate electrode are in the form of a side wall.
 3. Asemiconductor device comprising the first memory cell and the secondmemory cell according to claim 1, wherein the second gate insulatingfilm and the fourth gate insulating film include: a first silicon oxidefilm formed over the semiconductor substrate and over the side wall ofthe first gate electrode; a silicon nitride film formed over the firstsilicon oxide film; and a second silicon oxide film formed over thesilicon nitride film, wherein the silicon nitride film is the insulatingfilm for charge storage.
 4. A semiconductor device comprising the firstmemory cell and the second memory cell according to claim 1, wherein thefirst impurity region is shared between the first memory cell and thesecond memory cell.
 5. A semiconductor device comprising the firstmemory cell and the second memory cell according to claim 1, wherein afirst insulating film is formed over the first memory cell and thesecond memory cell, wherein a first plug and a second plug are formed inthe first insulating film, wherein the first plug is electricallyconnected to the first portion, and wherein the second plug iselectrically connected to the second portion.
 6. A semiconductor devicecomprising the first memory cell and the second memory cell according toclaim 1, wherein the insulating film for charge storage includes asilicon nitride film.
 7. The semiconductor device according to claim 1,wherein a gate length of the second gate electrode is smaller than agate length of the first gate electrode, and a gate length of the fourthgate electrode is smaller than a gate length of the third gateelectrode.
 8. A semiconductor device comprising, a first memory cell anda second memory cell arranged in a first direction; the first memorycell including: a semiconductor substrate; a first gate insulating filmformed over the semiconductor substrate; a first gate electrode formedover the first gate insulating film; a second gate insulating filmincluding an insulating film for charge storage formed over thesemiconductor substrate and over a side wall of the first gateelectrode; and a second gate electrode formed over the second gateinsulating film, adjacent with the first gate electrode through thesecond gate insulating film in the first direction, a first impurityregion formed in the semiconductor substrate and positioned on a secondgate electrode side, the second memory cell including: the semiconductorsubstrate; a third gate insulating film formed over the semiconductorsubstrate; a third gate electrode formed over the third gate insulatingfilm; a fourth gate insulating film including the insulating film forcharge storage formed over the semiconductor substrate and over a sidewall of the third gate electrode; and a fourth gate electrode formedover the fourth gate insulating film, adjacent with the third gateelectrode through the fourth gate insulating film in the firstdirection, the first impurity region positioned on a fourth gateelectrode side, wherein the first gate electrode, the second gateelectrode, the third gate electrode and the fourth gate electrode extendin a second direction perpendicular to the first direction, wherein thesecond gate electrode has a first portion extending toward the fourthgate electrode in the first direction, and wherein the fourth gateelectrode has a second portion extending toward the second gateelectrode in the first direction, and wherein a conductive film formingthe second gate electrode and a conductive film forming the fourth gateelectrode are not continuous with or connected with each other.
 9. Asemiconductor device comprising the first memory cell and the secondmemory cell according to claim 8, wherein the second gate electrode andthe fourth gate electrode are in the form of a side wall.
 10. Asemiconductor device comprising the first memory cell and the secondmemory cell according to claim 8, wherein the second gate insulatingfilm and the fourth gate insulating film include: a first silicon oxidefilm formed over the semiconductor substrate and over the side wall ofthe first gate electrode; a silicon nitride film formed over the firstsilicon oxide film; and a second silicon oxide film formed over thesilicon nitride film, wherein the silicon nitride film is the insulatingfilm for charge storage.
 11. A semiconductor device comprising the firstmemory cell and the second memory cell according to claim 8, wherein thefirst impurity region is shared between the first memory cell and thesecond memory cell.
 12. A semiconductor device comprising the firstmemory cell and the second memory cell according to claim 8, wherein afirst insulating film is formed over the first memory cell and thesecond memory cell, wherein a first plug and a second plug are formed inthe first insulating film, wherein the first plug is electricallyconnected to the first portion, and wherein the second plug iselectrically connected to the second portion.
 13. A semiconductor devicecomprising the first memory cell and the second memory cell according toclaim 8, wherein the insulating film for charge storage includes asilicon nitride film.
 14. The semiconductor device according to claim 8,wherein a gate length of the second gate electrode is smaller than agate length of the first gate electrode, and a gate length of the fourthgate electrode is smaller than a gate length of the third gateelectrode.